Silicon Carbide Semiconductor Technologies

Работ: 107

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14
ABI
Optimization of vertically stacked nanosheet FET immune to self-heating
M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1
СтатьяSemiconductor materials and devicesMicro and Nanostructures2023Цитирований: 5
ABI
Oxide film assisted dopant diffusion in silicon carbide
Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6
СтатьяSilicon and Solar Cell TechnologiesThin Solid Films2010Цитирований: 5
ABI
Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2010Цитирований: 5
ABI
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4
СтатьяAdvancements in Semiconductor Devices and Circuit Design2014Цитирований: 4
ABI
Influence of Defects on Low Temperature Diffusion of Boron in SiC
I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2011Цитирований: 4
ABI
Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al
I. G. Atabaev, Kh. N. Juraev, V. A. Pak
СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics2017Цитирований: 4
ABI
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 2
ABI
Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 2
ABI
Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2
ABI
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1
СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2005Цитирований: 2
ABI
Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron
I. G. Atabaev, Kh. N. Juraev
СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2
ABI
SYNTHESIS OF A SILICON CARBIDE FROM NATURAL RAW MATERIAL IN A SOLAR FURNACE
M. S. Paizullakhanov, L. S. Suvonova, N.N. Cherenda
СтатьяChemical and Physical Properties of MaterialsHigh Temperature Material Processes An International Quarterly of High-Technology Plasma Processes2023Цитирований: 2
ABI
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4
СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 2
ABI
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 2
ABI
Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers
S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1
СтатьяSemiconductor materials and interfacesphysica status solidi (a)1982Цитирований: 1
ABI
Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3
СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1
ABI
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 1
ABI
High Energy Resolution Detectors Based on 4H-SiC
Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5
СтатьяParticle Detector Development and PerformanceMaterials science forum2005Цитирований: 1
ABI
Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum
I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev
СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy2018Цитирований: 1
ABI
Investigation of the formation of defects under fast neutrons and gamma irradiation in 3C–SiC nano powder
M.N. Mirzayev, B. A. Abdurakhimov, E. Demir +14
СтатьяMuon and positron interactions and applicationsPhysica B Condensed Matter2021Цитирований: 1
ABI
Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion
Kh. N. Juraev, M. U. Hajiev, А. Кутлимратов +2
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Science2024Цитирований: 1
ABI

Silicon Carbide Semiconductor Technologies

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

Optimization of vertically stacked nanosheet FET immune to self-heating

Oxide film assisted dopant diffusion in silicon carbide

Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

Influence of Defects on Low Temperature Diffusion of Boron in SiC

Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

SYNTHESIS OF A SILICON CARBIDE FROM NATURAL RAW MATERIAL IN A SOLAR FURNACE

Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

High Energy Resolution Detectors Based on 4H-SiC

Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

Investigation of the formation of defects under fast neutrons and gamma irradiation in 3C–SiC nano powder

Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion