Работы, цитирующие эту работу

Работ: 4

Работа: Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

1. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.511885

2. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004230

3. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009018

4. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.preprint.001199