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Работы, на которые ссылается эта работа

Работ: 11

Работа: Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Статья2011Цитирований: 11
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Статья2012Цитирований: 6
    ABI

  3. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  4. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4
    ABI

  5. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

    Ming-Long Fan, Shao‐Yu Yang, Vita Pi‐Ho Hu +3

    Статья2014Цитирований: 4
    ABI

  6. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2
    ABI

  7. Double-gate junctionless transistor model including short-channel effects

    Bruna Cardoso Paz, Fernando Avila Herrera, A. Cerdeira +1

    Статья2015Цитирований: 2
    ABI

  8. Random telegraph-signal noise in junctionless transistors

    A. N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan +3

    Статья2011Цитирований: 2
    ABI

  9. Performance optimization of nanoscale junctionless transistors through varying device design parameters for ultra-low power logic applications

    Debapriya Basu Roy, Abhijit Biswas

    Статья2016Цитирований: 2
    ABI

  10. Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs With Underlap

    Nivedita Jaiswal, Abhinav Kranti

    Статья2018Цитирований: 2
    ABI

  11. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2020Цитирований: 1
    ABI