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Работы, цитирующие эту работу

Работ: 6

Работа: Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

  1. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    СтатьяSemiconductor materials and devices2024Цитирований: 1
    ABI

  2. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Статья2D Materials and ApplicationsApplied Sciences2023Цитирований: 1
    ABI

  3. Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

    Atabek E. Egamberdievich Atamuratov, Khushnudbek Sharifbaevich Saparov, Ahmed Yusupovich Yusupov +1

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignPreprints.org2023Цитирований: 0
    ABI

  4. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
    ABI

  5. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
    ABI

  6. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2026Цитирований: 0
    ABI