Работы, цитирующие эту работу

Работ: 5

Работа: Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

1. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001804

2. Silicon with Binary GexSi1 – x Compounds

   Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002219

3. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

   Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

   СтатьяMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003016

4. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.003073

5. The Influence of Impurity Nano- and Microclusters on the Photovoltaic and Electrophysical Properties of Silicon

   N. F. Zikrillaev, K. S. Ayupov, Kh. F. Zikrillaev +4

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.009999