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Работы, цитирующие эту работу

Работ: 6

Работа: Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

  1. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3
    ABI

  2. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2
    ABI

  3. Temperature Response Curve of Silicon Diode Temperature Sensors

    Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

    СтатьяAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI

  4. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
    ABI

  5. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
    ABI

  6. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0
    ABI