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Работы, цитирующие эту работу

Работ: 7

Работа: The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures

  1. Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers

    R. R. Kobulov, N. A. Matchanov, O. K. Ataboev +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2019Цитирований: 4
    ABI

  2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    СтатьяChalcogenide Semiconductor Thin FilmsModern Physics Letters B2023Цитирований: 4
    ABI

  3. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride

    R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov

    СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2023Цитирований: 2
    ABI

  4. Features of a ZnxCd1 – xS Buffer Layer for Use in Thin-Film Solar Cells in the Context of a Literature Review

    R. R. Kabulov

    Обзорная статьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2020Цитирований: 1
    ABI

  5. Influence of composition and heat treatment in CdCl2 solution on intrinsic point defects in CdTe films

    B. A. Ergashev, T.M. Razykov

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2017Цитирований: 0
    ABI

  6. Peculiarities of the Current Characteristics of a Solar Cell Based on Polycrystalline Silicon at Different Powers of Illumination by Sunlight

    R. R. Kabulov, S. Yu. Gerasimenko, M. U. Khajiev

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2022Цитирований: 0
    ABI

  7. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0
    ABI