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Работы, цитирующие эту работу

Работ: 8

Работа: Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

  1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    СтатьяSemiconductor materials and interfacesCrystallography Reports2022Цитирований: 5
    ABI

  2. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies2022Цитирований: 2
    ABI

  3. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 1
    ABI

  4. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    СтатьяSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice2020Цитирований: 0
    ABI

  5. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

    A. Sh. Razzakov, A. Latipova, Alibek Qodirov

    СтатьяSemiconductor Quantum Structures and DevicesBulletin of Science and Practice2021Цитирований: 0
    ABI

  6. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI

  7. Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate

    I.B. Sapaev, Б. Сапаев, D. Babajanov

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI

  8. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI