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Работы, цитирующие эту работу

Работ: 7

Работа: Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si

  1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4
    ABI

  2. Study of the Mobility and Electrical Conductivity of Chromium Silicide

    M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 3
    ABI

  3. Study of Silicide Formation in Large Diameter Monocrystalline Silicon

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Mukhammadsodik N. Mamatkulov +2

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2024Цитирований: 2
    ABI

  4. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

    Sharifa B. Utamuradova

    СтатьяAdvanced Materials Characterization TechniquesAdvanced Physical Research2024Цитирований: 1
    ABI

  5. Study of infrared quenching in silicide-silicon-silicide structures

    A. T. Mamadalimov, Makhmudhodzha Isaev

    СтатьяSemiconductor materials and interfacesAdvanced Physical Research2024Цитирований: 0
    ABI

  6. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

    N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 0
    ABI

  7. Study of the Thermoelectric Properties of Chrome Silicides

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Ismoil T. Bozarov +2

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
    ABI