Работы, на которые ссылается эта работа

Работ: 11

Работа: The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons
Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov
СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8
ABI
Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films
Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3
СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Physics2021Цитирований: 8
ABI
Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure
N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova
СтатьяSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics2021Цитирований: 8
ABI
15
Gertrudis Gómez de Avellaneda
Глава2022Цитирований: 6
ABI
Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉
С. З. Зайнабидинов, K. N. Musaev, N. A. Turgunov +1
Статья2012Цитирований: 6
ABI
Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging
Chang Sun, Hieu T. Nguyen, Fiacre Rougieux +1
Статья2016Цитирований: 3
ABI
Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals
N. A. Turgunov
СтатьяSilicon and Solar Cell TechnologiesInorganic Materials2018Цитирований: 3
ABI
Formation and kinetics of decomposition of impurity nickel precipitates in silicon
С. З. Зайнабидинов, N. A. Turgunov
Статья2004Цитирований: 2
ABI
Characterization of Cu and Ni Precipitates in n– and p-type Czochralski-grown Silicon by Photoluminescence
Chang Sun, Hieu T. Nguyen, Fiacre Rougieux +1
Статья2016Цитирований: 2
ABI
The effect of a heated electron on the VAX of a tunnel diode
G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1
СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2023Цитирований: 2
ABI
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ДругоеЦитирований: 1
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