Работы, цитирующие эту работу

Работ: 5

Работа: Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>E</mml:mi></mml:math>Center

1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

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   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2000Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.279519

2. Positron annihilation on defects in silicon irradiated with 15 MeV protons

   N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

   СтатьяMuon and positron interactions and applicationsJournal of Physics Condensed Matter2012Цитирований: 1

   ABIABI:AkademIndex/openalex/2012.article.000064

3. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

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   СтатьяMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2017Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.326849

4. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

   N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

   СтатьяRare-earth and actinide compoundsSemiconductors1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000107

5. Technology of Secondary Cast Polycrystalline Silicon and Its Application in the Production of Solar Cells

   A. L. Kadirov, B. M. Abdurakhmanov, Х. Б. Ашуров +1

   ГлаваDiverse Industrial Engineering TechnologiesEAI/Springer Innovations in Communication and Computing2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.chapter.000223