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Работы, цитирующие эту работу

Работ: 8

Работа: Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

  1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9
    ABI

  2. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    СтатьяChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B2022Цитирований: 6
    ABI

  3. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 2
    ABI

  4. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2020Цитирований: 2
    ABI

  5. Features of Liquid–Phase Epitaxy of (InSb)<sub>1–z</sub>(Sn2)<sub>z</sub> Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

    Shukrullo Usmonov, U. P. Asatova, A. M. Akhmedov

    СтатьяSemiconductor Quantum Structures and Devices2022Цитирований: 1
    ABI

  6. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

    А. С. Саидов, Sh. N. Usmonov, O. Z. Turgunov

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2023Цитирований: 0
    ABI

  7. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0
    ABI

  8. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0
    ABI