Работы, цитирующие эту работу

Работ: 3

Работа: Ideal 4H-SiC pn junction and its characteristic shunt

1. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

   Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

   СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2005Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.381994

2. Influence of Irradiation on Excess Currents in SiC pn Structures

   Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000166

3. About the Nature of Recombination Current in 4H-SiC pn Structures

   Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000217