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Работы, цитирующие эту работу

Работ: 10

Работа: Optical Energy Gap of the Mixed Crystal CdS<sub><i>x</i></sub>Te<sub>1-<i>x</i></sub>

  1. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

    S. A. Muzafarova, Ш. А. Мирсагатов, J. Janabergenov

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2007Цитирований: 10
    ABI

  2. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2010Цитирований: 8
    ABI

  3. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7
    ABI

  4. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6
    ABI

  5. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2009Цитирований: 3
    ABI

  6. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2008Цитирований: 3
    ABI

  7. Investigation of composition and current transport mechanism in polycrystalline thin film ultra violet Au–Zn x Cd1–x S–Mo-structure with narrow spectrum of photosensitivity

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2017Цитирований: 2
    ABI

  8. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2018Цитирований: 2
    ABI

  9. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 1
    ABI

  10. Formation of interfacial CdTe1−x S x solid solutions in CdTe/CdS heterojunctions

    J. Janabergenov, S. A. Muzafarova

    СтатьяQuantum Dots Synthesis And PropertiesInorganic Materials2007Цитирований: 1
    ABI