Работы, цитирующие эту работу

Работ: 3

Работа: Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279528

2. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

   G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.410284

3. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.003369