Работы, цитирующие эту работу

Работ: 2

Работа: The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

1. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2023.article.001403

2. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

   С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2019.article.000285