Работы, цитирующие эту работу

Работ: 5

Работа: Low threshold, large <i> T _o </i> injectionlaser emissionfrom (InGa)As quantum dots

1. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

   Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000137

2. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

   V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000030

3. Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy

   D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov +2

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000033

4. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

   Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000065

5. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

   A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000100