Работы, цитирующие эту работу

Работ: 5

Работа: The potential of higher manganese silicide as an optoelectronic thin film material

1. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

   СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.199258

2. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   СтатьяSemiconductor materials and interfaces2005Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.424565

3. Formation of higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfacesTechnical Physics2005Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.199248

4. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609626

5. Features of current carriers that cause thermo-photo conductivity in manganese silicide[H1]

   К. Адамбаев

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000348