Работы, цитирующие эту работу

Работ: 3

Работа: <i>Introduction to Semiconductor Physics</i>

1. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

   Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

   СтатьяSilicon Nanostructures and PhotoluminescenceRussian Physics Journal2010Цитирований: 1

   ABIABI:AkademIndex/openalex/2010.article.000276

2. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

   Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

   СтатьяSemiconductor materials and interfacesSemiconductors1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000061

3. Minority carrier lifetimes in polycrystalline silicon treated with liquid metals

   Б. Сапаев

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000187