Работы, цитирующие эту работу

Работ: 5

Работа: InGaAsP heterostructure avalanche photodiodes with high avalanche gain

1. Some features of photocurrent generation in single- and multibarrier photodiode structures

   A. V. Karimov, D. M. Yodgorova

   СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2010Цитирований: 3

   ABIABI:AkademIndex/openalex/2010.article.000151

2. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

   D. M. Edgorova, F. M. Ashrapov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000273

3. Highly sensitive photodetector based on ge double-barrier punch-through structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

   СтатьяSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment2015Цитирований: 1

   ABIABI:AkademIndex/openalex/2015.article.000359

4. DARK CURRENTS AND IMPACT IONIZATION COEFFICIENTS IN THE <font>InP</font>-<font>InGaAsP</font> DOUBLE HETEROSTRUCTURES

   Mehmet Özer, M. Ahmetoğlu, N. APRAILOV

   СтатьяSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000283

5. From Evolution to Prospects: Mechanisms, Advances, and Challenges of Avalanche Photodiodes

   Ahmed Yusupov, Elaman Nurullaev, K. Sattarov

   СтатьяAdvanced Optical Sensing Technologies2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.018363