Работы, цитирующие эту работу

Работ: 3

Работа: Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus

1. Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon

   М. К. Бахадырханов, Z.M. Saparniyazova, Х. М. Илиев +1

   СтатьяSemiconductor Quantum Structures and DevicesInorganic Materials2015Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.419054

2. Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

   M. K. Khakkulov, A. Sh. Mavlyanov, О. Э. Саттаров +2

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.010338

3. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

   Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.005819