Работы, цитирующие эту работу

Работ: 2

Работа: Investigation of the fast surface state spectrum of MIS structures by a differentialC–U method

1. Surface state density at the semiconductor-glass interface

   Aslan Nasirov

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2008Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.419525

2. Effect of pressure on the properties of a silicon-glass interface

   С. И. Власов, M. A. Ergasheva, T. P. Adylov

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000306