Работы, цитирующие эту работу

Работ: 2

Работа: Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states

1. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

   П. Б. Парчинский, С. И. Власов

   СтатьяSemiconductor materials and interfacesRussian Microelectronics2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.623985

2. Regular relief on a silicon surface as a structural defect getter

   L. S. Berman, I. V. Grekhov, L. S. Kostina +3

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000131