Работы, цитирующие эту работу

Работ: 2

Работа: A reliable approach to charge-pumping measurements in MOS transistors

1. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

   A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

   СтатьяSemiconductor materials and devicesTechnical Physics1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000193

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.006400