A. V. Karimov

45 та иш

Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

Features of the photo-electric characteristics of photoelectric converter of structures
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +3
МақолаSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20070 иқтибос
ABI
Combined method of growing epitaxial layers of A³B⁵ semiconductor compounds
D. M. Yodgorova, A. V. Karimov, F. A. Giyasova +1
МақолаBoron and Carbon Nanomaterials ResearchSHILAP Revista de lepidopterología20070 иқтибос
ABI
State and development trends of waveguide emitters based on A³B⁵ compounds
A. V. Karimov
МақолаBoron and Carbon Nanomaterials ResearchSHILAP Revista de lepidopterología20070 иқтибос
ABI
Condition and tendencies of development waveguide radiator son the basis of connections A³B⁵
A. V. Karimov
МақолаAdvanced Materials and Semiconductor TechnologiesDOAJ (DOAJ: Directory of Open Access Journals)20070 иқтибос
ABI
Optimization of the concentration’s distribution of the carriers on thickness of epitaxial layers
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2
МақолаSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20070 иқтибос
ABI
Combined way of cultivation of epitaxial layers of semicon-ductor connections A³B⁵
D. M. Yodgorova, A. V. Karimov, F. A. Giyasova +1
МақолаBoron and Carbon Nanomaterials ResearchDOAJ (DOAJ: Directory of Open Access Journals)20070 иқтибос
ABI
Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region
A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1
МақолаSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 иқтибос
ABI
Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface
A. A. Akopyan, Kh. N. Bachronov, O. Yu. Borkovskaya +5
Мақолаsolar cell performance optimizationSemiconductors20090 иқтибос
ABI
Methods to decrease losses of energy generated by solar electrical modules
A. V. Karimov, D. M. Yodgorova, A. Z. Rakhmatov +1
МақолаPhotovoltaic System Optimization TechniquesApplied Solar Energy20110 иқтибос
ABI
Thermal model of the limiter diode
A. Z. Rakhmatov, O. A. Abdulkhaev, A. V. Karimov +1
МақолаPulsed Power Technology ApplicationsJournal of Engineering Physics and Thermophysics20120 иқтибос
ABI
Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers
O. A. Abdulkhaev, G. O. Asanova, D. M. Yodgorova +1
МақолаSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20120 иқтибос
ABI
Features of producing an ohmic contact to frontal surfaces of photoconversion structures
A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1
МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20120 иқтибос
ABI
Photovoltaic silicon structures with two Schottky barriers
A. V. Karimov, D. M. Yodgorova, G. O. Kamanova
МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20130 иқтибос
ABI
Long-channel field-effect transistor with short-channel transistor properties
A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev
МақолаSemiconductor Quantum Structures and DevicesSemiconductors20140 иқтибос
ABI
On mechanism of radiative sensitivity of power diode direct voltage drop
A. V. Karimov, A. Z. Rakhmatov, S. P. Skorniakov +3
МақолаSemiconductor materials and interfacesRadioelectronics and Communications Systems20170 иқтибос
ABI
Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure
O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2
МақолаSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20180 иқтибос
ABI
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3
МақолаPulsed Power Technology ApplicationsTechnology and design in electronic equipment20180 иқтибос
ABI
Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2
МақолаSemiconductor materials and interfacesApplied Solar Energy20180 иқтибос
ABI
The Investigation of Critical Temperature Tc of Homophase Superconductors Bi1.7Pb0.3Sr2Ca(n– 1)CunOy (n = 3, 4, 5) and Current–Voltage Characteristics of InP Semiconductor–Bi/Pb Superconductor (2223, 2234, 2245) Sandwich Pairs
D. D. Gulamova, A. V. Karimov, Д.Г. Чигвинадзе +5
МақолаPhysics of Superconductivity and MagnetismTechnical Physics20190 иқтибос
ABI
КАПИТАЛ БОЗОРИНИ РИВОЖЛАНТИРИШ ЙЎНАЛИШЛАРИ
A. V. Karimov
МақолаMilitary Technology and StrategiesŬzbekiston suġurta bozori.20240 иқтибос
ABI