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Surface and Thin Film Phenomena

232 та иш

  1. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

    G. F. Karavaev, В. Н. Чернышов

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20060 иқтибос
    ABI

  2. A method for determining the thermal EMF and thermal conductivity

    D. M. Edgorova, S. S. Dzhakhanov, A. V. Karimov +1

    МақолаElectric Power Systems and ControlInstruments and Experimental Techniques20060 иқтибос
    ABI

  3. Experimental evidence of percolation phase transition in surface plasmons generation

    Masson, Jean-Baptiste, Gallot, Guilhem

    ПрепринтSurface and Thin Film PhenomenaarXiv (Cornell University)20060 иқтибос
    ABI

  4. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

    Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 иқтибос
    ABI

  5. Quantum Monte Carlo simulation of superconducting state of strongly correlated systems

    D.R. Djuraev, Z.M. Kenjaev

    МақолаPhysics of Superconductivity and Magnetism20070 иқтибос
    ABI

  6. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    МақолаSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 иқтибос
    ABI

  7. Features of current carriers that cause thermo-photo conductivity in manganese silicide[H1]

    К. Адамбаев

    МақолаSemiconductor materials and interfacesApplied Solar Energy20090 иқтибос
    ABI

  8. To study the interface semiconductor-dielectrics centres effect on the state density

    B. Kh. Qochqorov, M. Ehrgasheva, Н. Р. Рахимов +1

    МақолаSurface and Thin Film Phenomena20100 иқтибос
    ABI

  9. To definition of surface state density of semiconductor-dielectric interface

    B.Kh. Kuchkarov, Fayzulla A. Saparov

    МақолаSurface and Thin Film Phenomena20100 иқтибос
    ABI

  10. The multicharged cluster electronic structure of manganese atoms in silicon

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаElectron and X-Ray Spectroscopy Techniques20110 иқтибос
    ABI

  11. Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +2

    МақолаCopper Interconnects and ReliabilityJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20130 иқтибос
    ABI

  12. Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20180 иқтибос
    ABI

  13. DIAGONAL AND NONDIAGONAL MATRIX ELEMENTS OF THE EFFECTIVE HAMILTONIAN OF ELECTRONS IN A SEMICONDUCTOR (TAKING INTO ACCOUNT SPIN-ORBIT INTERACTION)

    Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Akhmedov Bahodir Bahromovich +1

    МақолаSurface and Thin Film PhenomenaEPRA International Journal of Multidisciplinary Research (IJMR)20200 иқтибос
    ABI

  14. Time delay in slow electron elastic scattering by potentials with arising levels

    M. Ya. Amusia, A. S. Baltenkov

    МақолаQuantum and electron transport phenomenaJournal of Physics Conference Series20200 иқтибос
    ABI

  15. Sub-barrier and Above-barrier Electron Transport Through Multilayer Semiconductors

    Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Iqboljon Mamirjonovich Eshboltayev +1

    МақолаQuantum and electron transport phenomenaAmerican Journal of Physics and Applications20200 иқтибос
    ABI

  16. Temperature Dependence of Urbach Energy in Non-Crystalline Semiconductors

    Rustam Ikramov, М. А. Нуриддинова, Khurshidbek A. Muminov +1

    МақолаSurface and Thin Film PhenomenaOptics and Photonics Journal20200 иқтибос
    ABI

  17. Partial time delays in elastic electron scattering by rectangular potential well with arising discrete levels

    M. Ya. Amusia, A. S. Baltenkov, Igor Woiciechowski

    МақолаQuantum and electron transport phenomenaAPS Division of Atomic, Molecular and Optical Physics Meeting Abstracts20200 иқтибос
    ABI

  18. Features of Obtaining Films MnXSiY on Silicon by Solid-phase Reaction

    Komiljon Yakubov, Mutabar Latipova, Alibek Qodirov

    МақолаSemiconductor materials and interfacesBulletin of Science and Practice20210 иқтибос
    ABI

  19. Computer simulation of scattering Xe+ ions from InP(001)❬110❭ surface at grazing incidence

    Hidoyat Egamberganovich Abdikarimov, Elyor Baxtiyorovich Rajabov, Gulyor Shavkatovna Turayeva

    МақолаIon-surface interactions and analysisDOAJ (DOAJ: Directory of Open Access Journals)20210 иқтибос
    ABI

  20. Auger Recombination in Semiconductors

    М. Н. Аликулов

    МақолаSurface and Thin Film Phenomena20210 иқтибос
    ABI

  21. Study of Electrical and Photoelectric Phenomena in Structures Based on Manganese Silicon Contact with Manganese High Silicon Membrane

    Akhmadjon Jurayevich Khusanov

    МақолаSemiconductor materials and interfaces20210 иқтибос
    ABI

  22. Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques

    Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev

    БобSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)20210 иқтибос
    ABI

  23. Investigation of stepped InP(001)<110> surface by the method of low energy ion scattering

    М. K. Kаrimov, Uchkun Kutliev, M. U. Otabaev +1

    МақолаIon-surface interactions and analysisJournal of Physics Conference Series20220 иқтибос
    ABI

  24. Structure of Aluminum Films for the Creation of Tunnel Junctions

    М. В. Стрелков, A. M. Chekushkin, A. A. Lomov +3

    МақолаSurface and Thin Film PhenomenaJournal of Communications Technology and Electronics20230 иқтибос
    ABI

  25. Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

    Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

    МақолаSurface and Thin Film PhenomenaThe European Physical Journal B20240 иқтибос
    ABI