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Ушбу ишга иқтибос қилган ишлар

12 та иш

Иш: Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

  1. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 иқтибос
    ABI

  2. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

    Bakhrom Igаmоv, Gunel Imanova, A.I. Kamardin +1

    МақолаSurface Roughness and Optical MeasurementsIntegrated ferroelectrics202412 иқтибос
    ABI

  3. Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7

    МақолаSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering20254 иқтибос
    ABI

  4. Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

    Б.Д. Игамов, Gunel Imanova, Vera Loboda +3

    МақолаChalcogenide Semiconductor Thin FilmsOptical Materials X20244 иқтибос
    ABI

  5. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    МақолаSemiconductor materials and interfacesMaterials Research Innovations20243 иқтибос
    ABI

  6. Raman and IR Spectrum Analysis of CrSi2 Thin Films Formed in Direct Current and Variable Frequency Modes of a Magnetron Sputtering Device

    K.T. Dovranov, Maksim Vinnichenko, V.V. Korablev +3

    МақолаChalcogenide Semiconductor Thin Films20242 иқтибос
    ABI

  7. Theoretical and experimental study of plasmon oscillation dispersion in Si and Ge crystals

    З. А. Исаханов, Б. Е. Умирзаков, Gunel Imanova

    МақолаSurface and Thin Film PhenomenaOptical Materials X20242 иқтибос
    ABI

  8. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 иқтибос
    ABI

  9. Thermal sensor based on si single crystal implanted with different parties P<sup>+</sup> and B<sup>+</sup> ions

    I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20230 иқтибос
    ABI

  10. Formation of Barium Silicide Coatings by Vacuum Thermal Evaporation Methods

    Bakhrom Igаmоv, Aleksey Kamardin, I. R. Bekpulatov +3

    Мақолаnanoparticles nucleation surface interactions20240 иқтибос
    ABI

  11. Obtaining Nano-Sized Silicide Films MESi2 for the Contact System

    Jasur Jumayev, Б. Е. Умирзаков, I. R. Bekpulatov +3

    МақолаSemiconductor materials and interfaces20240 иқтибос
    ABI

  12. Temperature dependence changes in the physical and chemical properties of ZnO detected by powder diffractometry

    U.Kh. Kholikov, Ш. Т. Хожиев, И.О. Косимов +7

    МақолаZnO doping and propertiesOptics Communications20250 иқтибос
    ABI