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Работы, цитирующие эту работу

Работ: 12

Работа: Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

  1. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13
    ABI

  2. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

    Bakhrom Igаmоv, Gunel Imanova, A.I. Kamardin +1

    СтатьяSurface Roughness and Optical MeasurementsIntegrated ferroelectrics2024Цитирований: 12
    ABI

  3. Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7

    СтатьяSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering2025Цитирований: 4
    ABI

  4. Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

    Б.Д. Игамов, Gunel Imanova, Vera Loboda +3

    СтатьяChalcogenide Semiconductor Thin FilmsOptical Materials X2024Цитирований: 4
    ABI

  5. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfacesMaterials Research Innovations2024Цитирований: 3
    ABI

  6. Raman and IR Spectrum Analysis of CrSi2 Thin Films Formed in Direct Current and Variable Frequency Modes of a Magnetron Sputtering Device

    K.T. Dovranov, Maksim Vinnichenko, V.V. Korablev +3

    СтатьяChalcogenide Semiconductor Thin Films2024Цитирований: 2
    ABI

  7. Theoretical and experimental study of plasmon oscillation dispersion in Si and Ge crystals

    З. А. Исаханов, Б. Е. Умирзаков, Gunel Imanova

    СтатьяSurface and Thin Film PhenomenaOptical Materials X2024Цитирований: 2
    ABI

  8. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 1
    ABI

  9. Thermal sensor based on si single crystal implanted with different parties P<sup>+</sup> and B<sup>+</sup> ions

    I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 0
    ABI

  10. Formation of Barium Silicide Coatings by Vacuum Thermal Evaporation Methods

    Bakhrom Igаmоv, Aleksey Kamardin, I. R. Bekpulatov +3

    Статьяnanoparticles nucleation surface interactions2024Цитирований: 0
    ABI

  11. Obtaining Nano-Sized Silicide Films MESi2 for the Contact System

    Jasur Jumayev, Б. Е. Умирзаков, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfaces2024Цитирований: 0
    ABI

  12. Temperature dependence changes in the physical and chemical properties of ZnO detected by powder diffractometry

    U.Kh. Kholikov, Ш. Т. Хожиев, И.О. Косимов +7

    СтатьяZnO doping and propertiesOptics Communications2025Цитирований: 0
    ABI