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Ish: Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions
А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2
MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 iqtibosABI