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22 та иш

Иш: Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

  1. Deep level centers in silicon carbide: A review

    A. А. Lebedev

    Шарҳ мақола19996 иқтибос
    ABI

  2. Investigation of boron diffusion in 6H-SiC

    Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan

    Мақола20035 иқтибос
    ABI

  3. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    МақолаSilicon and Solar Cell TechnologiesThin Solid Films20105 иқтибос
    ABI

  4. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 иқтибос
    ABI

  5. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 иқтибос
    ABI

  6. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 иқтибос
    ABI

  7. Oxidation kinetics of hot-pressed silicon carbide

    Subhash C. Singhal

    Мақола19764 иқтибос
    ABI

  8. A new approach in impurity doping of 4H-SiC using silicidation

    Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2

    Мақола20134 иқтибос
    ABI

  9. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос
    ABI

  10. Effect of deep levels on current excitation in 6H-SiC diodes

    N.I. Kuznetsov, J. A. Edmond

    Мақола19973 иқтибос
    ABI

  11. The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

    Suwan Mendis, Chin-che Tin, Ilkham G. Atabaev +1

    Мақола20133 иқтибос
    ABI

  12. Phonons in 3C-, 4H-, and 6H-SiC

    Hermann Nienhaus, T.U. Kampen, Winfried Mönch

    Мақола19952 иқтибос
    ABI

  13. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

    Koji Nakayama, Ryosuke Ishii, Katsunori Asano +3

    Мақола20112 иқтибос
    ABI

  14. Shallow acceptor levels in 4H- and 6H-SiC

    S. R. Smith, A. O. Evwaraye, W. C. Mitchel +1

    Мақола19992 иқтибос
    ABI

  15. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  17. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  18. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  19. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  20. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  21. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  22. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI