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Иш: Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

On the tensosensitivity of a p-n junction under illumination
G. Gulyamov, A. G. Gulyamov
МақолаOptical Polarization and EllipsometrySemiconductors201510 иқтибос
ABI
Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields
G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5
МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 иқтибос
ABI
The multivalued current–voltage characteristics in the tunnel diodes
К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1
Мақола20083 иқтибос
ABI
Excess Tunnel Current in Silicon Esaki Junctions
A. G. Chynoweth, W. L. Feldmann, R. A. Logan
Мақола19613 иқтибос
ABI
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
Tyler A. Growden, Weidong Zhang, E. R. Brown +5
Мақола20183 иқтибос
ABI
Tunnel junction <i>I</i>(<i>V</i>) characteristics: Review and a new model for p-n homojunctions
Nelly Moulin, Mohamed Amara, Fabien Mandorlo +1
Шарҳ мақола20193 иқтибос
ABI
The effect of a heated electron on the VAX of a tunnel diode
G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1
МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20232 иқтибос
ABI
Negative Differential Resistance Devices and Circuits
Paul R. Berger, A. Ramesh
Боб20112 иқтибос
ABI
N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes
К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1
Мақола20122 иқтибос
ABI
Stepwise current oscillations in tunnel and high-frequency semiconductor diodes
К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1
Мақола20112 иқтибос
ABI
Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes
К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1
Мақола20092 иқтибос
ABI
Power Conversion Enhancement of CdS/CdTe Solar Cell Interconnected with Tunnel Diode
Wagah F. Mohammed, Omar Daoud, M.N. Al-Tikriti
Мақола20122 иқтибос
ABI
151 kA/cm 2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications
Niu Jin, Sung-Yong Chung, Anthony T. Rice +4
Мақола20032 иқтибос
ABI
Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal
Д. А. Усанов, А. В. Скрипаль, N. V. Ugryumova +2
Мақола20002 иқтибос
ABI
Simple Method for Calculating the Tunneling Current of an Esaki Diode
J. Karlovský
Мақола19622 иқтибос
ABI
Сарлавҳасиз
Бошқа2 иқтибос
ABI
Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy
M. W. Dashiell, J. Kolodzey, P. Crozat +2
Мақола20022 иқтибос
ABI
930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template
Tyler A. Growden, Evan M. Cornuelle, David F. Storm +7
Мақола20192 иқтибос
ABI
Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation
G. Gulyamov, Bahodir Shahobiddinov, Alisher Z. Soliyev +2
МақолаSemiconductor materials and interfacesAIP conference proceedings20232 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
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Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI