Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

20 та иш

Иш: The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

  1. Silicon Photovoltaic Cells with Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +3

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy202015 иқтибос
    ABI

  2. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

    M. G. Mil’vidskiĭ, V. V. Chaldyshev

    Мақола199813 иқтибос
    ABI

  3. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters201912 иқтибос
    ABI

  4. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 иқтибос
    ABI

  5. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаSemiconductor materials and interfacesSemiconductors20218 иқтибос
    ABI

  6. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

    М. К. Бахадырханов, Z. T. Kenzhaev, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesInorganic Materials20228 иқтибос
    ABI

  7. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19947 иқтибос
    ABI

  8. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    МақолаMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 иқтибос
    ABI

  9. Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉

    С. З. Зайнабидинов, K. N. Musaev, N. A. Turgunov +1

    Мақола20126 иқтибос
    ABI

  10. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    МақолаMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 иқтибос
    ABI

  11. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Мақола20215 иқтибос
    ABI

  12. Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

    Weixin Ouyang, Feng Teng, Jr‐Hau He +1

    Мақола20194 иқтибос
    ABI

  13. Deep impurity levels and diffusion coefficient of manganese in silicon

    H. Nakashima, Kazuhito Hashimoto

    Мақола19913 иқтибос
    ABI

  14. Formation of selenium-containing complexes in silicon

    A. A. Taskin, E. G. Tishkovskiǐ

    Мақола20023 иқтибос
    ABI

  15. Donor deactivation in silicon nanostructures

    Mikael Björk, Heinz Schmid, Joachim Knoch +2

    Бошқа20092 иқтибос
    ABI

  16. Phase-transition-driven growth of compound semiconductor crystals from ordered metastable nanorods

    Roland Mainz, Ajay Singh, S. Levcenko +4

    Мақола20142 иқтибос
    ABI

  17. Оптимальные условия легирования никелем для повышения эффективности кремниевых фотоэлементов

    М.К. Бахадырханов, Z. T. Kenzhaev

    Мақола20212 иқтибос
    ABI

  18. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20232 иқтибос
    ABI

  19. Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon

    М. К. Бахадырханов, Z.M. Saparniyazova, Х. М. Илиев +1

    МақолаSemiconductor Quantum Structures and DevicesInorganic Materials20151 иқтибос
    ABI

  20. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

    M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20211 иқтибос
    ABI