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Ушбу иш иқтибос қилган ишлар

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Иш: Silicon with Binary GexSi1 – x Compounds

  1. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаSemiconductor materials and interfacesSemiconductors20218 иқтибос
    ABI

  2. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос
    ABI

  3. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 иқтибос
    ABI

  4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 иқтибос
    ABI

  5. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20136 иқтибос
    ABI

  6. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 иқтибос
    ABI

  7. IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    МақолаAdvanced Semiconductor Detectors and MaterialsRussian Microelectronics20126 иқтибос
    ABI

  8. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    МақолаMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 иқтибос
    ABI

  9. Above room temperature ferromagnetism in Mn-ion implanted Si

    M. Bolduc, C. Awo-Affouda, Andrew Stollenwerk +4

    Мақола20055 иқтибос
    ABI

  10. Properties of self-organized SiGe nanostructures formed by ion implantation

    Yu. N. Parkhomenko, A. I. Belogorokhov, Н. Н. Герасименко +2

    Мақола20045 иқтибос
    ABI

  11. Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures

    Б.А. Акимов, V. A. Bogoyavlenskii, L. I. Ryabovа +2

    Мақола19994 иқтибос
    ABI

  12. Self-consistent study of transport in Mn-doped semiconductor heterostructures

    Christian Ertler, Peter Senekowitsch, Jaroslav Fabian +1

    Мақола20103 иқтибос
    ABI

  13. Nanomaterials, Nanostructures, and Nanotechnologies, by A. I. Gusev, Moscow: Fizmatlit, 2005

    Г. П. Швейкин

    Мақола20063 иқтибос
    ABI

  14. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    МақолаSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 иқтибос
    ABI

  15. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  17. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  18. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  19. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

    Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20031 иқтибос
    ABI

  20. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI