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5 та иш

Иш: Oxide film assisted dopant diffusion in silicon carbide

  1. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 иқтибос
    ABI

  2. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос
    ABI

  3. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 иқтибос
    ABI

  4. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос
    ABI

  5. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    МақолаSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 иқтибос
    ABI