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6 та иш

Иш: Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  2. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 иқтибос
    ABI

  3. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 иқтибос
    ABI

  4. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    МақолаSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 иқтибос
    ABI

  5. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    МақолаSemiconductor materials and devicesApplied Sciences20202 иқтибос
    ABI

  6. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 иқтибос
    ABI