Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

1. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001403

2. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

   А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

   МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20153 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.373288

3. Determining certain physical settings of photocells

   A. Yu. Leyderman

   МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20110 иқтибос

   ABIABI:AkademIndex/openalex/2011.article.000435