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Иш: On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

Features of the behavior of lanthanum and hafnium atoms in silicon
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1
МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 иқтибос
ABI
Raman spectroscopy of silicon, doped with platinum and irradiated by protons
Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1
МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20239 иқтибос
ABI
X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons
Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov
МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос
ABI
15
Gertrudis Gómez de Avellaneda
Боб20226 иқтибос
ABI
Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses
С. И. Власов, Fayzulla A. Saparov
МақолаMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry20114 иқтибос
ABI
Deep-ultraviolet Raman investigation of silicon oxide: thin film on silicon substrate versus bulk material
Paweł Borowicz, Mariusz Latek, W. Rzodkiewicz +3
Мақола20122 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
INFLUENCE OF THE INTERFACE ON THE ELECTRICAL CHARACTERISTICS OF MIS STRUCTURES
Shakhrukh Kh. Daliev, Fayzulla A. Saparov
МақолаEngineering Diagnostics and ReliabilityEuropean Science Review20221 иқтибос
ABI