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18 та иш

Иш: Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    МақолаSilicon and Solar Cell TechnologiesInorganic Materials201124 иқтибос
    ABI

  2. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    МақолаQuantum and electron transport phenomenaJournal of the Korean Physical Society201411 иқтибос
    ABI

  3. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаSemiconductor materials and interfacesSemiconductors20218 иқтибос
    ABI

  4. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 иқтибос
    ABI

  5. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19947 иқтибос
    ABI

  6. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 иқтибос
    ABI

  7. Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаOptical and Acousto-Optic TechnologiesApplied Solar Energy20125 иқтибос
    ABI

  8. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    МақолаSemiconductor materials and interfacesSemiconductors19994 иқтибос
    ABI

  9. Formation of Se2 quasimolecules in selenium-doped silicon

    A. A. Taskin, E. G. Tishkovskiǐ

    Мақола19983 иқтибос
    ABI

  10. Temperature-electrical domains moving in the cathode-anode direction in CdS monocrystals

    K. Germanova

    Мақола19732 иқтибос
    ABI

  11. OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS

    N. Holonyak, S. F. Bevacqua

    Мақола19632 иқтибос
    ABI

  12. A Mössbauer study of a two-electron acceptor impurity of zinc in silicon

    Ф. С. Насрединов, N. P. Seregin, П. П. Серегин +1

    Мақола20002 иқтибос
    ABI

  13. Generation-recombination instabilities in thin-film structures

    V. V. Kolobaev

    Мақола19992 иқтибос
    ABI

  14. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20001 иқтибос
    ABI

  15. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20151 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  17. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  18. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI