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Ушбу иш иқтибос қилган ишлар

19 та иш

Иш: Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

  1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    МақолаIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 иқтибос
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    МақолаIon-surface interactions and analysisTechnical Physics201119 иқтибос
    ABI

  3. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    МақолаInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 иқтибос
    ABI

  4. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 иқтибос
    ABI

  5. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    МақолаIon-surface interactions and analysisTechnical Physics201513 иқтибос
    ABI

  6. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    МақолаSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 иқтибос
    ABI

  7. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    МақолаPhotocathodes and Microchannel PlatesTechnical Physics20198 иқтибос
    ABI

  8. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Мақола20136 иқтибос
    ABI

  9. Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

    И. А. Карпович, С. В. Тихов, E. L. Shobolov +1

    Мақола20064 иқтибос
    ABI

  10. Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

    Ф. Ф. Комаров, G. A. Ismailova, O. V. Milchanin +3

    Мақола20153 иқтибос
    ABI

  11. Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

    А. Ф. Комаров, Ф. Ф. Комаров, O. V. Milchanin +5

    Мақола20153 иқтибос
    ABI

  12. The structure of porous gallium phosphide

    T. N. Zavaritskaya, A. Kvit, N. N. Melnik +1

    Мақола19983 иқтибос
    ABI

  13. Theory of electronic structure evolution in GaAsN and GaPN alloys

    Paul R. C. Kent, Alex Zunger

    Мақола20013 иқтибос
    ABI

  14. Solar cell efficiency tables (version 49)

    Martin A. Green, Keith Emery, Yoshihiro Hishikawa +4

    Мақола20163 иқтибос
    ABI

  15. A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

    М. А. Putyato, N. A. Valisheva, М. О. Петрушков +8

    Мақола20193 иқтибос
    ABI

  16. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

    D. S. Abramkin, К. С. Журавлев, Т. С. Шамирзаев +2

    Мақола20112 иқтибос
    ABI

  17. Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

    V. F. Agekyan, V. I. Ivanov-Omskiĭ, V. N. Knyazevskii +2

    Мақола19982 иқтибос
    ABI

  18. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

    Oleg I. Rumyantsev, P. N. Brunkov, E. V. Pirogov +1

    Мақола20102 иқтибос
    ABI

  19. Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

    Aleksey Mikhaylov, Alexey V. Afanasyev, Vladimir A. Ilyin +5

    Мақола20162 иқтибос
    ABI