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Ушбу ишга иқтибос қилган ишлар

6 та иш

Иш: Double-injection currents in Zn-compensated silicon pin structures

  1. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    МақолаNear-Field Optical MicroscopyPhysics of the Solid State20147 иқтибос
    ABI

  2. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 иқтибос
    ABI

  3. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 иқтибос
    ABI

  4. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesSemiconductors20184 иқтибос
    ABI

  5. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 иқтибос
    ABI

  6. On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19820 иқтибос
    ABI