Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

15 та иш

Иш: Influence of Doping Conditions on the Properties of Nickel Atom Clusters

  1. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 иқтибос
    ABI

  2. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20238 иқтибос
    ABI

  3. X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons

    Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос
    ABI

  4. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос
    ABI

  5. Investigations of Nonlinear Optical Properties of Lithium Niobate Crystals

    Sharifa B. Utamuradova, Zakirjan T. Azamatov, Murodjon A. Yuldoshev +2

    МақолаPhotorefractive and Nonlinear OpticsEast European Journal of Physics20236 иқтибос
    ABI

  6. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    МақолаGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20115 иқтибос
    ABI

  7. Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses

    С. И. Власов, Fayzulla A. Saparov

    МақолаMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry20114 иқтибос
    ABI

  8. On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

    Shakhrukh Kh. Daliev, Fayzulla A. Saparov

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20233 иқтибос
    ABI

  9. Non-recombination injection mode

    A. Yu. Leyderman, R. A. Ayukhanov, R.M. Turmanova +2

    Мақола20213 иқтибос
    ABI

  10. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

    С. И. Власов

    МақолаAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20102 иқтибос
    ABI

  11. Influence of γ – radiation on the properties of silicon with clusters impurity atoms of manganese and nickel

    Z.M. Saparniyazova, Temur Ismaylov, Gulnaza Abdireymova +2

    МақолаEngineering and Agricultural InnovationsE3S Web of Conferences20212 иқтибос
    ABI

  12. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

    Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 иқтибос
    ABI

  13. Enhancing the Perfection of a Silicon Crystal Doped with Nickel and Zinc Impurities

    Daryabay Muratbaevich Esbergenov, Elmira M. Naurzalieva, Sabirbay A. Tursinbaev

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 иқтибос
    ABI

  14. Analysis of electricity loss calculation methods in distribution networks

    Abat Muratov, Z.M. Saparniyazova, Iles Bakhadirov +1

    МақолаEngineering and Agricultural InnovationsE3S Web of Conferences20211 иқтибос
    ABI

  15. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI