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Иш: Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

  1. Physics of Semiconductor Devices

    Simon M. Sze, Kwok K. Ng

    Китоб200633 иқтибос
    ABI

  2. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Мақола201111 иқтибос
    ABI

  3. Short-channel effects in SOI MOSFETs

    S. Veeraraghavan, J.G. Fossum

    Мақола19897 иқтибос
    ABI

  4. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design20216 иқтибос
    ABI

  5. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 иқтибос
    ABI

  6. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    МақолаSemiconductor materials and devicesMicro and Nanostructures20235 иқтибос
    ABI

  7. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 иқтибос
    ABI

  8. MOSFET scaling: Impact of two-dimensional channel materials

    R. Granzner, Zhansong Geng, W. Kinberger +1

    Мақола20164 иқтибос
    ABI

  9. Interfacial heat transport across multilayer nanofilms in ballistic–diffusive regime

    Hafedh Belmabrouk, Houssem Rezgui, Faouzi Nasri +2

    Мақола20203 иқтибос
    ABI

  10. Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node

    Houssem Rezgui, Faouzi Nasri, Giovanni Nastasi +5

    Мақола20203 иқтибос
    ABI

  11. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

    N. Loubet, Terence B. Hook, P. Montanini +61

    Мақола20173 иқтибос
    ABI

  12. Thermal conductivity of amorphous SiO2 thin film: A molecular dynamics study

    Wenhui Zhu, Guangping Zheng, Sen Cao +1

    Мақола20183 иқтибос
    ABI

  13. Dimensioning for power and performance under 10nm: The limits of FinFETs scaling

    M. Garcia Bardon, P. Schuddinck, Prasanth Raghavan +5

    Мақола20152 иқтибос
    ABI

  14. Exploring sub-20nm FinFET design with predictive technology models

    Saurabh Sinha, Greg Yeric, Vikas Chandra +2

    Мақола20122 иқтибос
    ABI

  15. Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

    M. Garcia Bardon, Yasser Sherazi, P. Schuddinck +14

    Мақола20162 иқтибос
    ABI

  16. Thermal conductivity and thermal boundary resistance of atomic layer deposited high-<i>k</i> dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

    Ethan A. Scott, John T. Gaskins, Sean W. King +1

    Мақола20182 иқтибос
    ABI

  17. The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law

    Peide D. Ye, T. Ernst, Mukesh Khare

    Мақола20192 иқтибос
    ABI

  18. Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Мақола20222 иқтибос
    ABI

  19. Investigation of Analog/RF and linearity performance with self-heating effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Мақола20232 иқтибос
    ABI

  20. Systematic performance benchmarking of nanosheet and FinFET: An intrinsic self-heating perspective

    Sunil Rathore, Rajeewa Kumar Jaisawal, Suneet Kumar Agnihotri +3

    Мақола20252 иқтибос
    ABI

  21. Nanoscale thermal transport

    David G. Cahill, W. K. Ford, Kenneth E. Goodson +5

    Мақола20032 иқтибос
    ABI

  22. Quantum capacitance devices

    Serge Luryi

    Мақола19882 иқтибос
    ABI

  23. Analysis of Novel Core-Shell Junctionless Nanosheet FET for CMOS Logic Applications

    Vakkalakula Bharath Sreenivasulu, M. Prasad, Epuri Deepthi +2

    Мақола20242 иқтибос
    ABI

  24. Impact of the Self-Heating Effect on Nanosheet Field Effect Transistor Performance

    Billel Smaani, Neha Paras, Shiromani Balmukund Rahi +3

    Мақола20232 иқтибос
    ABI

  25. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    МақолаAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 иқтибос
    ABI