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20 ta ish

Ish: Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

  1. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface

    А.А. Абдувайитов, Kh. Kh. Boltaev

    MaqolaSemiconductor materials and interfacesTechnical Physics20154 iqtibos
    ABI

  2. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    MaqolaOchiq kirishIon-surface interactions and analysisE3S Web of Conferences20234 iqtibos
    ABI

  3. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    MaqolaIon-surface interactions and analysisAIP conference proceedings20224 iqtibos
    ABI

  4. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    MaqolaSemiconductor materials and interfacesTechnical Physics20194 iqtibos
    ABI

  5. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20204 iqtibos
    ABI

  6. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos
    ABI

  7. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    MaqolaOchiq kirishNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 iqtibos
    ABI

  8. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 iqtibos
    ABI

  9. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20202 iqtibos
    ABI

  10. Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

    G. Kh. Allayarova

    MaqolaTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20200 iqtibos
    ABI

  11. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20210 iqtibos
    ABI

  12. Изучение критического угла каналирования ионов активных металлов через тонкие пленки алюминия

    З. А. Исаханов, Б.Е. Умирзаков, С.С. Насриддинов +2

    MaqolaOchiq kirish20210 iqtibos
    ABI

  13. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20220 iqtibos
    ABI

  14. Study of the critical angle of channeling of active metal ions through thin aluminum films

    З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2

    MaqolaOchiq kirishIon-surface interactions and analysisПисьма в журнал технической физики20220 iqtibos
    ABI

  15. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 iqtibos
    ABI

  16. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  17. Influence of Implantation of Active Metal Ions on the Composition, Emission and Optical Properties of MgO Films

    Maxsuna Yusupjonova, Д. А. Ташмухамедова, Б. Е. Умирзаков +3

    MaqolaOchiq kirishZnO doping and propertiesEast European Journal of Physics20250 iqtibos
    ABI

  18. Regional Variations in Mechanical Properties of Porcine Leptomeninges

    Chenyi Lei, Wenyuan Shao, Xi Yuan +8

    MaqolaOchiq kirishAutomotive and Human Injury BiomechanicsCyborg and Bionic Systems20250 iqtibos
    ABI

  19. STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface

    B.E. Umirzakov, Z.A. Isaxanov, I.R. Bekpulatov +3

    MaqolaChemical and Physical Properties of MaterialsPhysics Letters A20260 iqtibos
    ABI

  20. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

    MaqolaSemiconductor materials and interfacesSolid State Sciences20260 iqtibos
    ABI