Ushbu ish iqtibos qilgan ishlar

31 ta ish

Ish: Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

1. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

   A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

   MaqolaAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 iqtibos

   ABIABI:AkademIndex/2001.article.000094

2. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

   A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

   MaqolaSemiconductor materials and devicesDoklady Physics20074 iqtibos

   ABIABI:AkademIndex/2026.other.536303

3. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

   Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

   Maqola20114 iqtibos

   ABIABI:AkademIndex/2026.other.536305

4. Origin of NBTI variability in deeply scaled pFETs

   B. Kaczer, Tibor Grasser, Ph. Roussel +6

   Maqola20103 iqtibos

   ABIABI:AkademIndex/2026.other.536298

5. Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

   Ivan A. Starkov, A. S. Starkov

   Maqola20133 iqtibos

   ABIABI:AkademIndex/2026.other.536302

6. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

   J. Martín-Martínez, Simone Gerardin, E. Amat +5

   Maqola20093 iqtibos

   ABIABI:AkademIndex/2026.other.536308

7. Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

   Jihoon Seo, Gang-Jun Kim, Donghee Son +3

   Maqola20163 iqtibos

   ABIABI:AkademIndex/2026.other.536313

8. Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

   Yeohyeok Yun, Jihoon Seo, Young-Kyu Kwon +1

   Maqola20193 iqtibos

   ABIABI:AkademIndex/2026.other.536320

9. A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor

   Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene +1

   Maqola20132 iqtibos

   ABIABI:AkademIndex/2026.other.536297

10. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

    Souvik Mahapatra, C.D. Parikh, V. Ramgopal Rao +2

    Maqola20002 iqtibos

    ABIABI:AkademIndex/2026.other.536309

11. Analysis of hot-carrier-induced degradation mode on pMOSFET's

    F. Matsuoka, Hiroshi Iwai, H. Hayashida +3

    Maqola19902 iqtibos

    ABIABI:AkademIndex/2026.other.536311

12. AC versus DC hot-carrier degradation in n-channel MOSFETs

    K. Mistry, Barry M. Doyle

    Maqola19932 iqtibos

    ABIABI:AkademIndex/2026.other.536312

13. Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

    Yeohyeok Yun, Jihoon Seo, Donghee Son +1

    Maqola20182 iqtibos

    ABIABI:AkademIndex/2026.other.536318

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    ABIABI:AkademIndex/2026.other.536294

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    ABIABI:AkademIndex/2026.other.536295

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    ABIABI:AkademIndex/2026.other.536296

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    ABIABI:AkademIndex/2026.other.536299

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    ABIABI:AkademIndex/2026.other.536300

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    ABIABI:AkademIndex/2026.other.536301

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    ABIABI:AkademIndex/2026.other.536304

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    ABIABI:AkademIndex/2026.other.536306

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    ABIABI:AkademIndex/2026.other.536310

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    ABIABI:AkademIndex/2026.other.536314

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