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17 ta ish

Ish: Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

  1. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos
    ABI

  2. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  3. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  4. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20256 iqtibos
    ABI

  5. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20235 iqtibos
    ABI

  6. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos
    ABI

  7. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20264 iqtibos
    ABI

  8. Properties of Single Crystal Silicon Doped with Vanadium

    Kh.S. Daliev, Zafarjon M. Khusanov

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 iqtibos
    ABI

  9. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20261 iqtibos
    ABI

  10. Muhammad Yusufning “Ulugʻimsan, Vatanim” sheʼrida tarixiy shaxslar talqini

    Gulruh RAVSHANOVA

    MaqolaOchiq kirish20241 iqtibos
    ABI

  11. Oʻzbekistonda ishsizlikni kamaytirish yoʻllari

    Musurmankulova Gulchexra Isabekovna

    MaqolaOchiq kirish20241 iqtibos
    ABI

  12. Naqshbandiya tariqati rivojida Mavlono Orif Deggaroniyning oʻrni

    Sardor Quvonov

    MaqolaOchiq kirish20240 iqtibos
    ABI

  13. Maktabgacha taʼlim yoʻnalishi talabalarining mustaqil taʼlim faoliyatini rivojlantirishda kredit–modul tizimining oʻrni

    Moxinur Nimatova

    MaqolaOchiq kirish20240 iqtibos
    ABI

  14. Uzliksiz taʼlim tizimida STEAM taʼlim texnologiyasidan foydalanish zaruriyati

    Gulchexraxon Muladjanova, Mubinabonu Mullajonova

    MaqolaOchiq kirish20240 iqtibos
    ABI

  15. STEAM texnologiyalari

    Shaxnoza Qudratova, Aziz Kuziyev

    MaqolaOchiq kirish20240 iqtibos
    ABI

  16. Boshlangʻich sinf oʻquvchilarida tanqidiy fikrlashni rivojlantirishning nazariy asoslari

    Dilnoza Pardaboyeva

    MaqolaOchiq kirish20240 iqtibos
    ABI

  17. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

    M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

    MaqolaOchiq kirish20260 iqtibos
    ABI