Ushbu ish iqtibos qilgan ishlar

15 ta ish

Ish: The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

   Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

   MaqolaSemiconductor materials and interfacesSemiconductors20229 iqtibos

   ABIABI:AkademIndex/2022.article.000429

2. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

   Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20108 iqtibos

   ABIABI:AkademIndex/2026.other.144432

3. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

   Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos

   ABIABI:AkademIndex/2026.other.258448

4. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

   Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

   MaqolaOAOchiq kirish20238 iqtibos

   ABIABI:AkademIndex/2026.other.272176

5. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

   Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

   MaqolaOAOchiq kirishMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20237 iqtibos

   ABIABI:AkademIndex/2023.article.000934

6. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos

   ABIABI:AkademIndex/2023.article.001190

7. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos

   ABIABI:AkademIndex/2023.article.001215

8. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos

   ABIABI:AkademIndex/2023.article.001403

9. Optical Properties of GexSi1 – x Binary Compounds in Silicon

   Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos

   ABIABI:AkademIndex/2023.article.002005

10. Sarlavhasiz

    Boshqa4 iqtibos

    ABIABI:AkademIndex/2026.other.290838

11. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, A.S. Saidov, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsApplied Solar Energy20164 iqtibos

    ABIABI:AkademIndex/2026.other.499308

12. Review and perspective of materials for flexible solar cells

    Xiaoyue Li, Peicheng Li, Zhongbin Wu +3

    MaqolaOAOchiq kirish20202 iqtibos

    ABIABI:AkademIndex/2026.other.079974

13. Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge_<i>x</i>Si_1–<i>x</i> Electrodes for Li Ion Batteries

    D. Duveau, Bernard Fraisse, Frédérique Cunin +1

    Maqola20152 iqtibos

    ABIABI:AkademIndex/2026.other.381595

14. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.560643

15. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.560644