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20 ta ish

Ish: Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    MaqolaSilicon and Solar Cell TechnologiesInorganic Materials201126 iqtibos
    ABI

  2. Silicon Photovoltaic Cells with Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +3

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy202018 iqtibos
    ABI

  3. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202113 iqtibos
    ABI

  4. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

    М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201513 iqtibos
    ABI

  5. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry202011 iqtibos
    ABI

  6. Sarlavhasiz

    Boshqa10 iqtibos
    ABI

  7. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    MaqolaSemiconductor materials and interfacesSemiconductors20229 iqtibos
    ABI

  8. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos
    ABI

  9. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos
    ABI

  10. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    MaqolaOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  11. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20234 iqtibos
    ABI

  12. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

    A.S. Saidov, А. Кутлимратов, Б. Сапаев +1

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20014 iqtibos
    ABI

  13. Self-consistent study of transport in Mn-doped semiconductor heterostructures

    Christian Ertler, Peter Senekowitsch, Jaroslav Fabian +1

    Maqola20104 iqtibos
    ABI

  14. Physical foundations of the formation of the silicon-based heterovarizonic structure

    M. K. Bakhadirkhanov, С. Б. Исамов

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesЖурнал технической физики20223 iqtibos
    ABI

  15. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    MaqolaSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 iqtibos
    ABI

  16. Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus

    Yu. A. Astrov, В. А. Козлов, А. N. Lodygin +4

    Maqola20093 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI