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21 ta ish

Ish: Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 iqtibos
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201722 iqtibos
    ABI

  3. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    MaqolaIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201421 iqtibos
    ABI

  4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    MaqolaSemiconductor materials and interfacesModern Physics Letters B202317 iqtibos
    ABI

  5. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    MaqolaIon-surface interactions and analysisTechnical Physics201514 iqtibos
    ABI

  6. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    MaqolaMetal and Thin Film MechanicsTechnical Physics201513 iqtibos
    ABI

  7. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    MaqolaOchiq kirishSemiconductor materials and interfacesE3S Web of Conferences20239 iqtibos
    ABI

  8. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    MaqolaOchiq kirish20238 iqtibos
    ABI

  9. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    MaqolaOchiq kirishSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series20237 iqtibos
    ABI

  10. Estimation of lattice strain in ZnO nanoparticles: X-ray peak profile analysis

    P. Bindu, Sabu Thomas

    Maqola20145 iqtibos
    ABI

  11. Size–strain study of NiO nanoparticles by X-ray powder diffraction line broadening

    N. S. Gonçalves, Juliana Angélica Evangelista de Carvalho, Z.M. Lima +1

    Maqola20113 iqtibos
    ABI

  12. Localized epitaxial growth of MnSi1.7 on silicon

    Yiling Lian, L. J. Chen

    Maqola19863 iqtibos
    ABI

  13. Studies of formation of silicides and their barrier heights to silicon

    Karl‐Ragnar Sundström, S. Petersson, P.A. Tove

    Maqola19733 iqtibos
    ABI

  14. <i>Ab initio</i>study of the band structures of different phases of higher manganese silicides

    Д. Б. Мигас, В. Л. Шапошников, А. Б. Филонов +2

    Maqola20082 iqtibos
    ABI

  15. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20102 iqtibos
    ABI

  16. Formation and Schottky behavior of manganese silicides on <i>n</i>-type silicon

    M. Eizenberg, K. N. Tu

    Maqola19822 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI