Ushbu ish iqtibos qilgan ishlar

10 ta ish

Ish: Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

   MaqolaSemiconductor materials and interfacesTechnical Physics201415 iqtibos

   ABIABI:AkademIndex/2026.other.213638

2. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

   MaqolaSemiconductor materials and interfacesTechnical Physics20149 iqtibos

   ABIABI:AkademIndex/2026.other.095294

3. Electronic properties of semiconducting silicides: fundamentals and recent predictions

   L. Ivanenko, В. Л. Шапошников, А. Б. Филонов +6

   Maqola20046 iqtibos

   ABIABI:AkademIndex/2026.other.199255

4. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

   MaqolaSemiconductor materials and interfacesSemiconductors20175 iqtibos

   ABIABI:AkademIndex/2026.other.199258

5. Special Applications

   S. P. Murarka

   Bob19833 iqtibos

   ABIABI:AkademIndex/2026.other.212585

6. Implantation of sodium ions into germanium

   V.M. Korol, Yu. Kudriavtsev

   Maqola20123 iqtibos

   ABIABI:AkademIndex/2026.other.213637

7. Synthesis and applications of metal silicidenanowires

   Andrew L. Schmitt, Jeremy M. Higgins, Jeannine R. Szczech +1

   Maqola20093 iqtibos

   ABIABI:AkademIndex/2026.other.402209

8. The growth of manganese layers on Si(100) at room temperature: A photoelectron spectroscopy study

   Christopher A. Nolph, E. Vescovo, Petra Reinke

   Maqola20093 iqtibos

   ABIABI:AkademIndex/2026.other.527241

9. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.570810

10. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.570811