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18 ta ish

Ish: Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

  1. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics202312 iqtibos
    ABI

  2. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Maqola199810 iqtibos
    ABI

  3. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 iqtibos
    ABI

  4. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

    D. V. Lang

    Maqola19749 iqtibos
    ABI

  5. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20238 iqtibos
    ABI

  6. Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

    Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3

    MaqolaAdvanced Semiconductor Detectors and MaterialsApplied Physics20218 iqtibos
    ABI

  7. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20018 iqtibos
    ABI

  8. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 iqtibos
    ABI

  9. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 iqtibos
    ABI

  10. Silicon clusters doped with an yttrium metal atom impurity

    Chuanyun Xiao, Jessica Blundell, Frank Hagelberg +1

    Maqola20034 iqtibos
    ABI

  11. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    MaqolaSilicon and Solar Cell TechnologiesModern Physics Letters B19974 iqtibos
    ABI

  12. Comparison of Infrared and Activation Analysis Results in Determining the Oxygen and Carbon Content in Silicon

    C. Gross, Gianni Gaetano, T. N. Tucker +1

    Maqola19722 iqtibos
    ABI

  13. Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

    О. В. Александров, A. O. Zakhar’in, Н. А. Соболев +1

    Maqola20022 iqtibos
    ABI

  14. Thermophysical spectroscopy of the defective states in silicon

    Kh. T. Igamberdyev, A. T. Mamadalimov, P. K. Khabibullaev

    MaqolaSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics19891 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. Effect of heat treatment on the properties of erbium-doped silicon

    С. И. Власов, D. É. Nazyrov, A. A. Iminov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20001 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI